商品目录 场效应管(MOSFET)
漏源电压(Vdss) 40V
连续漏极电流(Id)(25°C 时) 6A,5A
栅源极阈值电压 3V @ 250uA
漏源导通电阻 30mΩ @ 6A,10V
最大功率耗散(Ta=25°C) 2W
类型 N沟道和P沟道
General Description
The AO4614B uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be used
in H-bridge, Inverters and other applications.
Product Summary
N-Channel P-Channel
VDS (V) = 40V, -40V
ID = 6A (VGS=10V) -5A (VGS=-10V)
RDS(ON)
< 30mΩ (VGS=10V) < 45mΩ (VGS= -10V)
< 38mΩ (VGS=4.5V) < 63mΩ (VGS= -4.5V)
100% UIS Tested 100% UIS Tested
100% Rg Tested 100% Rg Tested