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![](http://www.icdemi.com/CMIS/Center_photos/ecms2//20247510847_2_S3MB_SMB.jpg) | 型号 S3MB | ![](http://www.icdemi.com/CMIS/Center_photos/ecms2//20247510833_2_S3KB_SMB.jpg) | 型号 S3KB | ![](http://www.icdemi.com/CMIS/Center_photos/ecms2//20247510817_2_S3JB_SMB.jpg) | 型号 S3JB | ![](http://www.icdemi.com/CMIS/Center_photos/ecms2//20247510759_2_S3GB_SMB.jpg) | 型号 S3GB | ![](http://www.icdemi.com/CMIS/Center_photos/ecms2//20247510744_2_S3DB_SMB.jpg) | 型号 S3DB | ![](http://www.icdemi.com/CMIS/Center_photos/ecms2//20247510730_2_S3BB_SMB.jpg) | 型号 S3BB | ![](http://www.icdemi.com/CMIS/Center_photos/ecms2//2024751073_2_S3AB_SMB.jpg) | 型号 S3AB | ![](http://www.icdemi.com/CMIS/Center_photos/ecms2//202251614024_2_TD301D232H_TD301D232H.jpg) | 型号 TD301D232H |
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![GS3140](http://www.icdemi.com/CMIS/Center_photos/ecms2//202296105211_2_GS3140_GS3140_.jpg) |
产品型号 | GS3140 | 品牌 | GEM | 封装 | SOP-8 | 价格 | 电询 | 描述 | 30V双N+双P沟道场效应管MOSFET | 查看资料 | GS3140 | |
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产品说明
特点: 先进的沟槽工艺技术 ,超低导通电阻的高密度电池设计 , 表面贴装封装(无铅(Pb)和无卤素)
参数:
PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)
VDSS ID RDS(on) (m-ohm) Max VDSS ID RDS(on) (m-ohm) Max
30V 6.5A 28 @ VGS = 10 V,ID=6.5A -30V -6.0A 42 @ VGS = -10V,ID=-6.0A
42 @ VGS = 4.5V,ID=5.0A 70 @ VGS = -4.5V,ID=-5A
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