制造商: IXYS
产品种类: MOSFET
RoHS: 符合RoHS 详细信息
Id-连续漏极电流: 27 A
Vds-漏源极击穿电压: 800 V
Rds On-漏源导通电阻: 320 mOhms
晶体管极性: N-Channel
Vgs-栅源极击穿电压 : 20 V
Vgs th-栅源极阈值电压: 4.5 V
Qg-栅极电荷: 170 nC
最大工作温度: + 150 C
Pd-功率耗散: 500 W
安装风格: Through Hole
封装 / 箱体: TO-264-3
封装: Tube
商标: IXYS
通道模式: Enhancement
配置: Single
下降时间: 13 ns
正向跨导 - 最小值: 20 S
最小工作温度: - 55 C
上升时间: 28 ns
系列: IXFK27N80
工厂包装数量: 25
商标名: HiPerFET
典型关闭延迟时间: 50 ns
单位重量: 10 g

IXFK27N80 27A 800V
Features
International standard packages
JEDECTO-264 AA,epoxymeet
UL 94 V-0, flammability classification
miniBLOC, with Aluminium nitride
isolation
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density