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![WGD2N60S](http://www.icdemi.com/CMIS/Center_photos/ecms2//202032114499_2_WGD2N60_WGD2N60.jpg) |
产品型号 | WGD2N60S | 品牌 | WG | 封装 | TO-252 | 价格 | 电询 | 描述 | TO252贴片2A600V N沟道场效应管 | 查看资料 | WGD2N60S | |
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产品说明
TO252贴片2A600V N沟道场效应管
WGD2N60D
绝对最大额定值(除非另有说明,否则Ta = 25℃)
符号参数值单位
VDSS漏源电压600 V
ID漏极电流
Tc = 25℃2
一个
Tc = 100℃1.5
VGSS栅源电压±30 V
EAS单脉冲雪崩能量(note1)120 mJ
IAR雪崩电流(注2)2 A
PD功率耗散(TC = 25℃)23 W
Tj结温(最大值)150
储存温度-55〜+ 150℃
TL焊接的最高铅温度
目的,距离外壳1/8英寸,持续5秒300
热特性
符号参数典型值 最高 单元
RθJC热阻,连接至外壳-4.46
℃/瓦
RθJA热阻,连接至环境-62.5
特征:
□低固有电容。
□出色的开关特性。
□扩大了安全操作区域。
□无与伦比的栅极电荷:Qg = 9nC(典型值)。
□BVDSS = 600V,ID = 2A
□RDS(on):4.8Ω(最大)@ VG = 10V
□经过100%雪崩测试
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