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RA55H4047M
产品型号RA55H4047M
品牌MITSUBISHI
封装H2S
价格电询
描述高频射频功率放大模块
查看资料RA55H4047M

产品说明


三菱全新原装 RA55H4047M射频模块 功放模块,DESCRIPTION
The RA55H4047M is a 55-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The
output power and drain current increase as the gate voltage
increases. With a gate voltage around 4V (minimum), output
power and drain current increases substantially. The nominal
output power becomes available at 4.5V (typical) and 5V
(maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but
may also be used for linear modulation by setting the drain
quiescent current with the gate voltage and controlling the
output power with the input power.
FEATURES
Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
Broadband Frequency Range: 400-470MHz
Low-Power Control Current IGG=1mA (typ) at VGG=5V
Module Size: 66 x 21 x 9.88 mm
Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
RoHS COMPLIANCE
RA55H4047M-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the Lot Marking.
This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.

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