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产品型号 | IRFP150N | 品牌 | IR | 封装 | TO-247 | 价格 | 电询 | 描述 | N沟道场效应管39A100V | 查看资料 | IRFP150N | |
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产品说明
IRFP150N Description:Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit,combined with the fast switching speed andruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designerwith an extremely efficient and reliable device for usein a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levelspreclude the use of TO-220 devices. The TO-247 issimilar but superior tothe earlier TO-218 packagebecause of its isolated mounting hole.
IRFP150N描述:来自国际整流器公司的第五代HEXFET采用先进的处理技术,可实现每硅面积的极低导通电阻。 这种优点与HEXFET功率MOSFET众所周知的快速开关速度和坚固耐用的器件设计相结合,为设计人员提供了一种极其有效和可靠的器件,可广泛用于各种应用中。 TO-247封装是商业工业应用的首选,在商业应用中,较高的功率水平导致无法使用TO-220器件。 TO-247与之相似,但由于其隔离的安装孔而优于早期的TO-218封装。 产品种类: MOSFET RoHS: 详细信息 技术: Si 安装风格: Through Hole 封装 / 箱体: TO-247-3 晶体管极性: N-Channel 通道数量: 1 Channel Vds-漏源极击穿电压: 100 V Id-连续漏极电流: 39 A Rds On-漏源导通电阻: 36 mOhms Vgs - 栅极-源极电压: - 20 V, + 20 V Qg-栅极电荷: 110 nC 最小工作温度: - 55 C 最大工作温度: + 175 C Pd-功率耗散: 140 W 通道模式: Enhancement 封装: Tube 配置: Single 高度: 20.7 mm 长度: 15.87 mm 晶体管类型: 1 N-Channel 宽度: 5.31 mm 商标: Infineon / IR 产品类型: MOSFET 工厂包装数量: 400
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