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![](http://www.icdemi.com/CMIS/Center_photos/ecms2//2020724134549_2_D050505NS-1W_D050505NS-1WR3.jpg) | 型号 D050505NS-1WR3 | ![](http://www.icdemi.com/CMIS/Center_photos/ecms2//2020724134532_2_D050505S-1W_D050505S-1W.jpg) | 型号 D050505S-1WR3 | ![](http://www.icdemi.com/CMIS/Center_photos/ecms2//20247210402_2_SA9110_SA9110.jpg) | 型号 SA9110 | ![](http://www.icdemi.com/CMIS/Center_photos/ecms2//2022812111516_2_NU403_NU403.jpg) | 型号 NU403 | ![](http://www.icdemi.com/CMIS/Center_photos/ecms2//202441215309_2_CMD12N10_CMD12N10(1).jpg) | 型号 CMD12N10 | ![](http://www.icdemi.com/CMIS/Center_photos/ecms2//2024514102213_2_SCM1316AFA_SCM1316AFA.jpg) | 型号 SCM1316AFA | ![](http://www.icdemi.com/CMIS/Center_photos/ecms2//202051917628_2_BZX84C5V6_BZX84C5V6_Z3.jpg) | 型号 BZX84C5V6 | ![](http://www.icdemi.com/CMIS/Center_photos/ecms2//202462595955_2_K7805-1000R3L_K7805-1000R3L.jpg) | 型号 K7805-1000R3L |
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![2SK3878](http://www.icdemi.com/CMIS/Center_photos/ecms2//2014821151416_2_2SK3878_2SK3878.jpg) |
产品型号 | 2SK3878 | 品牌 | TOSHIBA | 封装 | TO-3P | 价格 | 电询 | 描述 | N沟道场效应管9A,900V | 查看资料 | 2SK3878 | |
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产品说明
2SK3878参数:9A,900V,N沟道场效应管 制造商: Toshiba 产品种类: MOSFET RoHS: 符合RoHS 详细信息 商标: Toshiba Id-连续漏极电流: 9 A Vds-漏源极击穿电压: 900 V Rds On-漏源导通电阻: 1 Ohms 晶体管极性: N-Channel Vgs-栅源极击穿电压 : 30 V Qg-栅极电荷: 60 nC 最大工作温度: + 150 C Pd-功率耗散: 150 W 安装风格: Through Hole 封装 / 箱体: TO-3P-3 封装: Tube 配置: Single 下降时间: 20 ns 正向跨导 - 最小值: 7 S 最小工作温度: - 55 C 上升时间: 25 ns 工厂包装数量: 50
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